Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy

被引：0

作者：

Onabe, K. ^{[1
]}

Wu, J. ^{[1
]}

Katayama, R. ^{[1
]}

Zhao, F.H. ^{[1
]}

Nagayama, A. ^{[2
]}

Shiraki, Y. ^{[3
]}

机构：

[1] Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

[2] Saitama Laboratory, Japan Radio Co., Ltd., 2-1-4 Fukuoka, Kamifukuoka 356-0011, Japan

[3] Res. Ctr. Adv. Sci. Technol. (RCAST), University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan

来源：

Physica Status Solidi (A) Applied Research | 2000年 / 180卷 / 01期

关键词：

Band structure - Deep level transient spectroscopy - Low temperature properties - Metallorganic vapor phase epitaxy - Morphology - Optical variables measurement - Photoluminescence - Semiconducting films - Semiconductor growth - Thermal effects;

D O I：

10.1002/1521-396X(200007)180:13.0.CO;2-B

中图分类号：

学科分类号：

摘要：

Cubic GaN films on GaAs (001) substrates which show a low-temperature photoluminescence (PL) without the deep-level orange (2.0 to 2.1 eV) band were grown by metalorganic vapor phase epitaxy (MOVPE). The orange luminescence recovers its relative intensity at room temperature, though the dominance of band-edge free exciton is still significant. The surface morphology was much smoother and the inclusion of hexagonal phase was much reduced for the samples with the suppressed orange band. It is suggested that the role of the GaN buffer layer is very essential in the optimized growth for high optical quality films, providing a flat cubic structure template as well as avoiding thermal damage of GaAs surface at high temperatures.

引用

页码：15 / 19