Spin and charge transport in double-junction Fe/MgO/GaAs/MgO/Fe heterostructures

被引：3

作者：

Wolski, S. ^{[1
]}

Szczepanski, T. ^{[1
]}

Dugaev, V. K. ^{[1
,2
,3
]}

Barnas, J. ^{[4
,5
]}

Landgraf, B. ^{[6
]}

Slobodskyy, T. ^{[6
]}

Hansen, W. ^{[6
]}

机构：

[1] Rzeszow Univ Technol, Dept Phys, PL-35959 Rzeszow, Poland

[2] Univ Lisbon, Inst Super Tecn, Dept Fis, P-1049001 Lisbon, Portugal

[3] Univ Lisbon, Inst Super Tecn, CFIF, P-1049001 Lisbon, Portugal

[4] Adam Mickiewicz Univ, Fac Phys, PL-61614 Poznan, Poland

[5] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland

[6] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 04期

关键词：

ROOM-TEMPERATURE; INJECTION; MAGNETORESISTANCE; METAL; LAYER;

D O I：

10.1063/1.4906397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved. (C) 2015 AIP Publishing LLC.

引用

页数：7