Transient thermal analysis of high-power LED package

被引：0

作者：

Dai, Wei-Feng ^{[1
]}

Wang, Jun ^{[1
]}

Li, Yue-Sheng ^{[1
]}

机构：

[1] Department of Material Science, Fudan University, Shanghai 200433, China

来源：

Bandaoti Guangdian/Semiconductor Optoelectronics | 2008年 / 29卷 / 03期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

3D model of a typical high-power light-emitting diode (LED) package was established and finite element analysis was carried out to simulate the distributions of temperature and thermal stress in the LED device from initial power on to normal working status. The analysis was compared with the well-designed experiment and the simulation temperature was compliant to experiments at most typical points. The study demonstrated the specific values of temperature, strain and stress in the device with time increasing. The measures to reduce the failure high-power LED were discussed.

引用

页码：324 / 328

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