Robust ESD protection device based on dual-direction silicon controlled rectifier

被引：0
|
作者：
Zhang F. [1 ,2 ]
Liu C. [1 ]
Huang L. [1 ]
Wu Z.-G. [2 ]
机构：
[1] School of Electronics Engineering and Computer Science, University of Science and Technology of China, Hefei
[2] National ASIC Design Engineering Center, Institute of Automation, Chinese Academy of Sciences, Beijing
来源：
| 1676年 / Zhejiang University卷 / 51期
关键词：
Dual-direction silicon controlled rectifier (DDSCR); Electrostatic discharge (ESD); Secondary breakdown current; TCAD simulation; Transmission line pulse testing;
D O I：
10.3785/j.issn.1008-973X.2017.08.026
中图分类号：
学科分类号：
摘要：
A typical dual-direction silicon controlled rectifier (DDSCR) and two new DDSCR were designed and fabricated based on CSMC 0.5 μm Bipolar-CMOS-DMOS (BCD) process in order to study the ESD robustness of DDSCR. The new structures include DDSCR with additional N+ implant in NWELL and additional P+ implant in NWELL. The total current density and ESD robustness of those three structures were analyzed with the simulation of TCAD software. Key features of those ESD protection devices were compared by TLP testing after tape-out. Both simulation and test results show that, DDSCR_N+ almost has the same triggering voltage and holding voltage of the proposed devices as the conventional DDSCR. DDSCR_N+ provides 160% improvement of secondary breakdown current and exhibits the stronger ESD robustness. © 2017, Zhejiang University Press. All right reserved.
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页码：1676 / 1680
页数：4
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