Growth of DySi2 layers on Si surface by high-current Dy-ion implantation

被引：0

作者：

Cheng, Xiang Qian ^{[1
]}

Liu, Bai Xin ^{[1
]}

机构：

[1] Laboratory of Advanced Materials, Dept. of Mat. Sci. and Eng., Tsinghua University, Beijing 100084, China

来源：

| 1600年 / Japan Society of Applied Physics卷 / 42期

关键词：

Electric conductivity - Ion beams - Ion implantation - Ion sources - Morphology - Silicon wafers - Surfaces - Synthesis (chemical) - Thermocouples;

D O I：

暂无

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学科分类号：

摘要：

We report, in this paper, the synthesis of DySi2 layers on Si surfaces by high-current Dy-ion implantation in Si wafers using a metal vapor vacuum arc ion source. It was found that the continuous DySi2 layers could grow at a relatively low formation temperature of 190°C and that the surface morphology varied with the variation of the implantation parameters. The formation mechanism of the equilibrium DySi2 phase as well as the continuous DySi2 layer on Si surface is proposed in terms of ion beam heating and the effect of ion dose on the Dy-ion implantation process.

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