Low-loss interlayer - Thick layers of porous silicon and oxidized porous silicon for application to the microwave/RF-IC

被引：0

作者：

Long, Yongfu ^{[1
]}

Zhu, Ziqiang ^{[1
]}

Lai, Zongsheng ^{[1
]}

Xin, Peisheng ^{[1
]}

Shi, Yanling ^{[1
]}

机构：

[1] Dept. of Electron. Eng., East China Normal Univ., Shanghai 200062, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 06期

关键词：

Fabrication - Integrated circuits - Porous silicon;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The use of a thick layer of porous silicon (PS)/oxidized porous silicon (OPS) is proposed as a low-loss interlayer for passive elements in the monolithic microwave integrated circuit. The formation of the PS/OPS thick layers about 70 μm on low-resistivity Si is studied, which is expected to increase the substrate resistivity and reduce its effective dielectric loss under the microwave operation. A significant improved microwave performance on low-R Si substrates is demonstrated by measuring the microwave characteristics of coplanar waveguides fabricated on the Si substrates with thick OPS.

引用

页码：609 / 613

共 50 条

[41] In situ spectroscopic ellipsometric investigation of vacuum annealed and oxidized porous silicon layers
Fried, M.
Wormeester, H.
Zoethout, E.
Lohner, T.
Polgar, O.
Barsony, I.
Thin Solid Films, 1998, 313-314 (1-2): : 459 - 463
[42] In situ spectroscopic ellipsometric investigation of vacuum annealed and oxidized porous silicon layers
Fried, M
Wormeester, H
Zoethout, E
Lohner, T
Polgar, O
Barsony, I
THIN SOLID FILMS, 1998, 313 : 459 - 463
[43] Thermal conductivity and nanoindentation hardness of as-prepared and oxidized porous silicon layers
Zhenqian Fang
Ming Hu
Wei Zhang
Xurui Zhang
Haibo Yang
Journal of Materials Science: Materials in Electronics, 2008, 19 : 1128 - 1134
[44] Morphological characterization of sacrificial layers of porous silicon for Photovoltaic application
Ould-abbas, A.
Madani, M.
Sari, N-E. Chabane
THIN FILMS AND POROUS MATERIALS, 2009, 609 : 269 - 273
[45] A novel process for the preparation of thick porous silicon layers with very high porosity
Feyh, A
Laermer, F
Kronmüller, S
Mokwa, W
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (08): : 1597 - 1601
[46] Thick oxidised porous silicon layers for the design of a biomedical thermal conductivity microsensor
Roussel, Ph.
Lysenko, V.
Remaki, B.
Delhomme, G.
Dittmar, A.
Barbier, D.
Sensors and Actuators, A: Physical, 1999, 74 (01): : 100 - 103
[47] Thick oxidised porous silicon layers for the design of a biomedical thermal conductivity microsensor
Roussel, P
Lysenko, V
Remaki, B
Delhomme, G
Dittmar, A
Barbier, D
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 74 (1-3) : 100 - 103
[48] Nanoscale nature and low thermal conductivity of porous silicon layers
Lysenko, V.
Gliba, V.
Strikha, V.
Dittmar, A.
Delhomme, G.
Roussel, Ph.
Barbier, D.
Jaffrezic-Renault, N.
Martelet, C.
Applied Surface Science, 1998, 123-124 : 458 - 461
[49] Nanoscale nature and low thermal conductivity of porous silicon layers
Lysenko, V
Gliba, V
Strikha, V
Dittmar, A
Delhomme, G
Roussel, P
Barbier, D
Jaffrezic-Renault, N
Martelet, C
APPLIED SURFACE SCIENCE, 1998, 123 : 458 - 461
[50] Thin palladium membrane microreactors with oxidized porous silicon support and their application
Ye, SY
Tanaka, S
Esashi, M
Hamakawa, S
Hanaoka, T
Mizukami, F
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2005, 15 (11) : 2011 - 2018

← 1 2 3 4 5 →