Low-loss interlayer - Thick layers of porous silicon and oxidized porous silicon for application to the microwave/RF-IC

被引：0
|
作者：
Long, Yongfu [1 ]
Zhu, Ziqiang [1 ]
Lai, Zongsheng [1 ]
Xin, Peisheng [1 ]
Shi, Yanling [1 ]
机构：
[1] Dept. of Electron. Eng., East China Normal Univ., Shanghai 200062, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 06期
关键词：
Fabrication - Integrated circuits - Porous silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The use of a thick layer of porous silicon (PS)/oxidized porous silicon (OPS) is proposed as a low-loss interlayer for passive elements in the monolithic microwave integrated circuit. The formation of the PS/OPS thick layers about 70 μm on low-resistivity Si is studied, which is expected to increase the substrate resistivity and reduce its effective dielectric loss under the microwave operation. A significant improved microwave performance on low-R Si substrates is demonstrated by measuring the microwave characteristics of coplanar waveguides fabricated on the Si substrates with thick OPS.
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页码：609 / 613
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