Microstructure and Growth of Epitaxial Single Diamond Films with Boron-Doping

被引：0
|
作者：
Chen M. [1 ]
Li H. [1 ]
Wang B. [1 ]
Xiong Y. [1 ]
Feng Z. [1 ]
Cheng Y. [1 ]
机构：
[1] School of Material Science and Engineering, Southwest University of Science and Technology, Mianyang
来源：
Xiyou Jinshu/Chinese Journal of Rare Metals | 2018年 / 42卷 / 12期
关键词：
Borane concentration; Microstructure; Single crystal diamond film; Step flow;
D O I：
10.13373/j.cnki.cjrm.XY17120039
中图分类号：
学科分类号：
摘要：
Using a self-made ring-type resonator microwave plasma chemical vapor deposition (MPCVD) system, the epitaxial single diamond films with different boron content was prepared by changing the concentration of borane in the reaction gas while other process parameters maintained constant. Then the microstructure of the obtained films was investigated by Raman spectroscopy, laser fluorescence emission spectroscopy and X-ray diffraction (XRD) rocking curve. The results showed through 325 nm wavelength laser exciting, the films produced a fluorescence peak at 524 nm associated with boron doping, and along with the increase of borane concentration in the reaction gas, the intensity of fluorescence peak and the full width at half maxima (FWHM) of characteristic peaks of Raman spectroscopy as well as XRD rocking curve would also increase, which indicated that the enhancement of borane concentration in the reaction gas would give rise to the boron content in the epitaxial single diamond film and at the same time, the crystal structure integrity and quality would decay gradually. Finally the surface morphologies of the epitaxial single crystal diamond films were analyzed by optical microscope (OM) and atomic force microscope (AFM), which predicted that all films grew in the step flow pattern, but as the borane concentration in reaction became bigger, the number of the steps would decrease and its height and width increased gradually. Therefore, boron-doping would result in significant changes in the microstructure and growth characteristics of epitaxial single crystal diamond films. © Editorial Office of Chinese Journal of Rare Metals. All right reserved.
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页码：1294 / 1300
页数：6
相关论文
共 29 条
  • [1] Baliga B.J., Semiconductors for high-voltage, vertical channel field-effect transistors, Journal of Applied Physics, 53, 3, (1982)
  • [2] Chow T.P., Tyagi R., Wide bandgap compound semiconductors for superior high-voltage unipolar power devices, IEEE Transactions on Electron Devices, 41, 8, (1994)
  • [3] Huang A.Q., New unipolar switching power device figures of merit, IEEE Electron Device Letters, 25, 5, (2004)
  • [4] Yuan M.W., Research progress of diamond based electronic devices, Micronanoelectronic Technology, 49, 10, (2012)
  • [5] Xu L., Xiong Y., Wang B., Han W.H., Li X.L., Fang L.P., Effect of microstructure of nano-doped diamond nanoparticles on emission performance of microwave field, Chinese Journal of Rare Metals, 40, 10, (2016)
  • [6] Kalish R., Doping of diamond, Carbon, 37, 5, (1999)
  • [7] Wei J.J., He Q., Gao X.H., Guo H.B., Shi S.Y., Lu F.X., Tang W.Z., Chen G.C., Study of boron-doped diamond films, Journal of Synthetic Crystals, 36, 3, (2007)
  • [8] Blank V.D., Bormashov V.S., Tarelkin S.A., Buga S.G., Kuznetsov M.S., Teteruk D.V., Kornilov N.V., Terentiev S.A., Volkov A.P., Power high-voltage and fast response Schottky barrier diamond diodes, Diamond & Related Materials, 57, (2015)
  • [9] Bormashov V., Troschiev S., Volkov A., Tarelkin S., Korostylev E., Golovanov A., Kuznetsov M., Teteruk D., Kornilov N., Terentiev S., Buga S., Blank V., Development of nuclear microbattery prototype based on Schottky barrier diamond diodes, Physica Status Solidi, 212, 11, (2016)
  • [10] Rashid S.J., Tajani A., Coulbeck L., Brezeanu M., Butler T., Rupesinghe N.L., Twitchen D.J., Amaratunga G.A.J., Udrea F., Taylor P., Dixon M., Isberg J., Modelling of single-crystal diamond Schottky diodes for high-voltage applications, Diamond & Related Materials, 15, 2-3, (2006)
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