Top-down fabrication of large-area GaN micro- and nanopillars

被引：0

作者：

Debnath, Ratan ^{[1
,2
]}

Ha, Jong-Yoon ^{[1
,3
]}

Wen, Baomei ^{[1
,2
]}

Paramanik, Dipak ^{[1
]}

Motayed, Abhishek ^{[1
,3
]}

King, Matthew R. ^{[4
]}

Davydov, Albert V. ^{[1
]}

机构：

[1] Material Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg,MD,20899, United States

[2] N5 Sensors Inc., Rockville,MD,20852, United States

[3] Institute for Research in Electronics and Applied Physics, University of Maryland, College Park,MD,20742, United States

[4] Northrop Grumman ES, Linthicum,MD,21090, United States

来源：

关键词：

Gallium nitride;

D O I：

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学科分类号：

摘要：

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