High power RF LDMOS transistors for avionics applications

被引：0

作者：

Mollee, Hans ^{[1
]}

O'Shea, Steven ^{[1
]}

Wilson, Paul ^{[1
]}

Vennema, Korne ^{[1
]}

机构：

[1] Philips Semiconductors, Mansfield, United States

来源：

| 1600年 / Horizon House, Norwood, MA, United States卷 / 43期

关键词：

Amplifiers (electronic) - Avionics - Cost effectiveness - Electric potential - Electronics packaging - Gain control - Gates (transistor) - Metallizing - Switching - Thermal variables measurement - Transponders;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The use of high-power radio-frequency laterally-diffused metal oxide semiconductor (LDMOS) transistor greatly improves the design of amplifiers for avionics applications. Transponders using LDMOST can enjoy gain linearity over a high dynamic range, easy gain control using the gate voltage and an almost zero switching time delay between input and output. The technology also offers better thermal control, nontoxic packaging and reduced parts count. The potential costs savings due to lower power supply costs, a gold metallization system, and automated die attach and wire bonding equipment ensure device consistency in high volume production, enhancing customer yield and reducing rework.

引用

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