Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes

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机构：
[1] Nagase, Masanori
[2] 2,Suhara, Michihiko
[3] Miyamoto, Yasuyuki
[4] Furuya, Kazuhito
来源：
Nagase, Masanori | 1600年 / JJAP, Tokyo, Japan期
关键词：
Theoretical; (THR); -; Experimental; (EXP);
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摘要：
We studied the peak width of current vs voltage (I-V) characteristics of triple-barrier resonant tunneling diodes (TBRTDs) experimentally and theoretically. A GaInAs/InP TBRTD was fabricated by organo metallic vapor phase epitaxy (OMVPE). A theory of I-V characteristics of TBRTDs was developed by taking the structural inhomogeneity into account to explain the experimental peak width. The fluctuation of the well width in a TBRTD grown by OMVPE was estimated as two atomic layers.
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