High-Throughput Thermophysical Characterization of Semiconductors

被引:0
作者
Zhou, Shaojie [1 ]
Mao, Yali [1 ]
Ma, Yunliang [1 ]
Ma, Guoliang [1 ]
Yuan, Chao [1 ]
机构
[1] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
基金
中国国家自然科学基金;
关键词
Automatic control; deep learning; high throughput; thermal transport properties; THERMAL-BOUNDARY RESISTANCE; HEAT-CAPACITY; GAN FILMS; CONDUCTIVITY; SILICON;
D O I
10.1109/TIM.2024.3485440
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Pump-probe thermoreflectance (Pump-probe TR) is a noncontact detection technique that has been widely used for thermal characterization of materials. In the traditional characterization process, spot detection is usually employed to fit unknown thermal property parameters using a nonlinear fitting process. However, when processing a large amount of data in a specified area of a sample, the traditional measurement process appears to be time-consuming and labor-intensive. In this work, we propose a high-throughput method for semiconductor thermophysical characterization. The optical path of the measurement system is combined with automatic control components to realize automatic scanning measurements. Deep learning techniques are utilized for high-throughput data processing. We first demonstrated the entire measuring process with a Au-sapphire sample, whose interlayers are intentionally controlled by coating different interlayers. The validity of the method can be demonstrated by the measurement results of the thermal boundary conductance (TBC) of Au-sapphire and the thermal conductivity (TC) of sapphire in the scanned area. Then, we demonstrated the application of nondestructive scanning measurement in the industrial production of GaN-on-Si samples, comparing the measurement results at different resolutions. We validate the scanning results demonstrating that this method can measure with high accuracy and speed. Meanwhile, the high-resolution scanning measurement can observe the subtle difference in thermal characterization in the area. This method significantly reduces the time and labor required to measure compared to traditional methods and it is particularly efficient for thermophysical characterization detection of high-volume wafers.
引用
收藏
页数:9
相关论文
共 54 条
[1]  
Alajlouni S., 2022, P 21 IEEE INT C THER, P1, DOI [10.1109/iTherm54085.2022.9899513, DOI 10.1109/ITHERM54085.2022.9899513]
[2]   High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films [J].
Alvarez-Escalante, Gustavo ;
Page, Ryan ;
Hu, Renjiu ;
Xing, Huili Grace ;
Jena, Debdeep ;
Tian, Zhiting .
APL MATERIALS, 2022, 10 (01)
[3]   Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN [J].
Bagheri, Pegah ;
Reddy, Pramod ;
Kim, Ji Hyun ;
Rounds, Robert ;
Sochacki, Tomasz ;
Kirste, Ronny ;
Bockowski, Michal ;
Collazo, Ramon ;
Sitar, Zlatko .
APPLIED PHYSICS LETTERS, 2020, 117 (08)
[4]   High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films [J].
Bin Hoque, Md Shafkat ;
Koh, Yee Rui ;
Braun, Jeffrey L. ;
Mamun, Abdullah ;
Liu, Zeyu ;
Huynh, Kenny ;
Liao, Michael E. ;
Hussain, Kamal ;
Cheng, Zhe ;
Hoglund, Eric R. ;
Olson, David H. ;
Tomko, John A. ;
Aryana, Kiumars ;
Galib, Roisul ;
Gaskins, John T. ;
Elahi, Mirza Mohammad Mahbube ;
Leseman, Zayd C. ;
Howe, James M. ;
Luo, Tengfei ;
Graham, Samuel ;
Goorsky, Mark S. ;
Khan, Asif ;
Hopkins, Patrick E. .
ACS NANO, 2021, 15 (06) :9588-9599
[5]   Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation [J].
Bougher, Thomas L. ;
Yates, Luke ;
Lo, Chien-Fong ;
Johnson, Wayne ;
Graham, Samuel ;
Cola, Baratunde A. .
NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING, 2016, 20 (01) :22-32
[6]   Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3 SiC Interfaces [J].
Cheng, Zhe ;
Mu, Fengwen ;
You, Tiangui ;
Xu, Wenhui ;
Shi, Jingjing ;
Liao, Michael E. ;
Wang, Yekan ;
Huynh, Kenny ;
Suga, Tadatomo ;
Goorsky, Mark S. ;
Ou, Xin ;
Graham, Samuel .
ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (40) :44943-44951
[7]   Heat capacity and phonon mean free path of wurtzite GaN [J].
Danilchenko, B. A. ;
Paszkiewicz, T. ;
Wolski, S. ;
Jezowski, A. ;
Plackowski, T. .
APPLIED PHYSICS LETTERS, 2006, 89 (06)
[8]   ENTHALPY AND HEAT-CAPACITY STANDARD REFERENCE MATERIAL - SYNTHETIC SAPPHIRE (ALPHA-AL2O3) FROM 10 TO 2250 K [J].
DITMARS, DA ;
ISHIHARA, S ;
CHANG, SS ;
BERNSTEIN, G ;
WEST, ED .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1982, 87 (02) :159-163
[9]  
Dobrovinskaya E. R., 2009, Sapphire: Material, Manufacturing, Application, V55
[10]   Prediction of size effect on thermal conductivity of nanoscale metallic films [J].
Feng, Bo ;
Li, Zhixin ;
Zhang, Xing .
THIN SOLID FILMS, 2009, 517 (08) :2803-2807