Magnetic-field and laser effects on the electronic and donor states in semiconducting quantum dots

被引：0

作者：

Brandi, H.S. ^{[1
]}

Latgé, A. ^{[2
]}

Oliveira, L.E. ^{[3
]}

机构：

[1] Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro-RJ, 21945-970, Brazil

[2] Instituto de Física, Universidade Federal Fluminense, Niterói-RJ, 24210-340, Brazil

[3] Instituto de Física, Unicamp, CP 6165, Campinas-São Paulo, 13083-970, Brazil

来源：

| 1600年 / American Institute of Physics Inc.卷 / 92期

关键词：

Semiconducting gallium - Nanocrystals - Quantum dot lasers - Magnetic field effects - III-V semiconductors - Semiconducting gallium arsenide - Semiconductor quantum dots - Quantum computers;

D O I：

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摘要：

Light shifts induced in the electronic and shallow on-center donor states in spherical semiconductor quantum dots, including magnetic field effects, are theoretically investigated. The interaction of light with the spherical GaAs-(Ga, Al)As quantum dot is treated within a dressed-band approach in which the Kane band structure scheme is used to model the GaAs bulk semiconductor whereas the dressing by the laser field is treated through the renormalization of the GaAs energy gap and conduction/valence effective masses. This nonperturbative approach is valid far from resonances and has been successfully adopted for other confined semiconductor heterostructures. The discrete nature of the electronic and impurity states, characteristic of quantum dot systems, and the possibility of adding extra confining effects by laser and applied magnetic fields opens up a promising route of applicability and/or manipulation of quantum-dot states in recent quantum-computer proposals. © 2002 American Institute of Physics.

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