A fixed-tuned 340 GHz sub-harmonic mixer

被引：0

作者：

Yang D. ^{[1
]}

Zhang L. ^{[1
,2
]}

Xu P. ^{[1
]}

Zhao X. ^{[1
]}

Gu G. ^{[1
]}

Liang S. ^{[1
,2
]}

Lv Y. ^{[1
,2
]}

Feng Z. ^{[1
,2
]}

机构：

[1] The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang

[2] National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang

来源：

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2022年 / 51卷 / 12期

关键词：

anti-parallel; conversion loss; fixed-tuned; sub-harmonic mixer;

D O I：

10.3788/IRLA20220168

中图分类号：

学科分类号：

摘要：

The design and fabrication of a fixed-tuned 320-360 GHz sub-harmonic mixer, featuring a newly developed small anode junction anti-parallel pair of planar Schottky diodes chip, are presented. A traditional E-plane split-block waveguide architecture was adopted in the mixer's design: the diodes chip was flip-chipped onto a quartz-based microstrip circuit and suspendedly glued to the bottom half of an equally split waveguide block with silver epoxy. A method of combination of field and circuit was applied to simulate and optimize the performance of the mixing circuit. Every functioning part of the mixing circuit was calculated with field simulating software to create its own S-parameters package, which was then combined with the diodes' barriers to be used by nonlinear circuit simulating software to simulate and optimize the performance of the mixer. The final test indicates that the ndicates that the mixer's double side band (DSB) conversion losses were lower than 9 dB, over 12% of bandwidth (320-360 GHz), with 4-6 mW of local oscillator (LO) power input; and at room temperature a minimum DSB equivalent noise temperature of 780 K was measured for RF frequency between 310 GHz and 340 GHz. © 2022 Chinese Society of Astronautics. All rights reserved.

引用

共 14 条

[1]

Zhang Jingshui, Kong Lingqin, Dong Liquan, Et al., Terahertz CMOS transistor model and experimental analysis, Optics and Precision Engineering, 25, 12, pp. 3128-3136, (2017)

[2]

Liu Xinyuan, Zeng Haomin, Tian Xin, Et al., Transmission simulation and safety analysis of terahertz radiation in skin, Optics and Precision Engineering, 29, 5, pp. 999-1007, (2021)

[3]

Dong Zhuo, Chen Jie, Zhu Yifan, Et al., Room-temperature terahertz photodetectors based on black arsenic-phosphorus, Chinese Optics, 14, 1, pp. 182-195, (2021)

[4]

Wang Xiaodong, Yan Wei, Li Zhaofeng, Et al., Application of planar antenna in field-effect transistor terahertz detectors, Chinese Optics, 13, 1, pp. 1-13, (2020)

[5]

Liu Zhaoguo, Zhou Huanli, He Weidi, Et al., Development of terahertz detectors with low dimensional materials, Infrared and Laser Engineering, 50, 1, (2021)

[6]

Lian Yuxuan, Feng Wei, Ding Qingfeng, Et al., 340 GHz wireless communication receiving front-ends based on AlGaN/GaN HEMT terahertz detectors, Infrared and Laser Engineering, 50, 5, (2021)

[7]

Thomas B, Maestrini A, Beaudin G., A low-noise fixed-tuned 300–360-GHz sub-harmonic mixer using planar Schottky diodes, IEEE Microwave and Wireless Componts Letters, 15, 12, pp. 865-867, (2005)

[8]

Mehdi I, Marazita S M, Humphrey D A, Et al., Improved 240-GHz subharmonically pumped planar Schottky diode mixers for space-borne applications, IEEE Transactions on Microwave Theory and Techniques, 46, 12, pp. 2036-2042, (1998)

[9]

Schlecht E, Gill J, Dengler R, Et al., A unique 520-590 GHz biased subharmonically-pumped Schottky mixer, IEEE Microwave and Wireless Components Letters, 17, 12, pp. 879-881, (2007)

[10]

Liu Ge, Zhang Bo, Zhang Lisen, Et al., 0.42 THz subharmonic mixer based on 3D precisely modeled diode, J Infrared Millim Waves, 37, 3, pp. 338-343, (2018)

← 1 2 →