Alumina thin film coated ammonium dinitramide fabricated by atomic layer deposition

被引：0

作者：

Gong, Ting ^{[1
,2
]}

Qin, Li-Jun ^{[1
,2
]}

Yan, Rui ^{[2
]}

Hu, Lan ^{[2
]}

Ji, Yue-Ping ^{[2
]}

Feng, Hao ^{[1
]}

机构：

[1] Laboratory of Material Surface Engineering and Nanofabrication, Xi'an Modern Chemistry Research Institute, Xi'an

[2] Science and Technology on Combustion and Explosion Laboratory, Xi'an Modern Chemistry Research Institute, Xi'an

来源：

Wuji Cailiao Xuebao/Journal of Inorganic Materials | 2014年 / 29卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Alumina; Ammonium dinitramide; Atomic layer deposition; Hygroscopicity;

D O I：

10.15541/jim20130572

中图分类号：

学科分类号：

摘要：

To deposit alumina thin films on ammonium dinitramide (ADN) by atomic layer deposition (ALD), trimethylaluminum and water were used as the precursors. The surface morphology and chemical compositions of the ALD alumina coated ADN were characterized by scanning electron microscope (SEM) and X-ray photoelectron spectroscope (XPS). The hygroscopic property of the ALD alumina coated ADN was studied by a vapor adsorption analyzer (VSA). The possible mechanism of ALD alumina film growth on the surface of ADN was discussed. The characterization results indicate that the ALD alumina film completely covers the surface of ADN. The thickness of the alumina film can reach hundreds of nanometers. After 48 h of air exposure, the shapes and topologies of the alumina coated ADN particles are maintained. The hygroscopicity of the ADN samples coated by 200 and 400 cycles of ALD alumina are 40.99% and 40.75%, respectively. Although the ALD alumina coating completely covers the surface of ADN and successfully maintains the shapes and topologies of ADN particles in a wet environment, the hygroscopicity of the ALD alumina coated ADN is not improved.

引用

页码：869 / 874

页数：5

共 24 条

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