Theoretical Investigation of the Properties of Magnetic W-Doped InSb Using TB-mBJ Approximation

被引:0
作者
Mohamed, Drioua [1 ,2 ,5 ]
Abdelhamid, Badaoui [3 ]
Mohammed, Elkeurti [5 ]
Keltoum, Boudia [1 ,2 ,4 ]
机构
[1] Univ Tissemsilt, Sci & Technol Fac, Mat Sci Dept, BP 182, Tissemsilt 38000, Algeria
[2] Univ Sci & Technol USTO, Lab Phys Studies Mat, El MNaouar,BP 1505, Oran, Algeria
[3] Univ Ctr Salhi Ahmed, Artificial Intelligence Lab Mech & Civil Struct &, POB 66, Naama, Algeria
[4] Univ Ibn Khaldoun, Phys Engn Lab, Tiaret 14000, Algeria
[5] Univ Dr Moulay Tahar, Lab Phys Chem Studies, Saida 20000, Algeria
关键词
Spintronic; Dilute Magnetic Semiconductor; InSb; DFT; TB-mBJ; Half-metallicity; HALF-METALLICITY; SEMICONDUCTORS; 1ST-PRINCIPLES; FERROMAGNETISM; GAP;
D O I
10.1134/S0036024424702054
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Our current study employs the spin-polarized density functional theory (DFT) using the all-electron full potential linear augmented plane-wave method (FP-LAPW) to examine the structural, electronic, and magnetic properties of InSb doped with Tungsten (In1-xWxSb with x = 0.125, 0.25) in the zinc blende crystal structure. We used, for the electronic exchange and correlation energy, the generalized gradient approximation (GGA) with the Wu-Cohen (WC) functional, improved with the Tran-Blaha modified Becke-Johnson (TB-mBJ) approach for the electronic properties. The obtained results show that this calculation method allows for reliable band gap values. The estimated structural properties match well with existing experimental results. The value of the total magnetic moment is around 3.00 mu B for the investigated compounds, and because of their half-metallic ferromagnetic properties, they are regarded prospective candidates for spintronic applications.
引用
收藏
页码:2810 / 2815
页数:6
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