Top-seeded solution growth of 3 inch diameter 4H-SiC bulk crystal using metal solvents

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20141217488006
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(1) Technical Research and Development Bureau, Nippon Steel and Sumitomo Metal Corporation, Fuso-cho 1-8, Amagasaki, Hyogo 660-0891, Japan; (2) Higashifuji Technical Center, Toyota Motor Corporation 1200, Mishuku, Susono, Shizuoka 410-1193, Japan; (3) Department of Material Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan | 1600年 / Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited卷 / Trans Tech Publications Ltd期
关键词：
We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stability during long-term growth. One of major technological problems in the solution growth is that the precipitation of polycrystalline SiC which hiders the stable single crystal growth. Another problem is the fluctuation of supersaturation at the growth interface during the growth. Through the optimization of growth process conditions; we have successfully grown 4H-SiC single crystals up to 14 mm long with three-inch-diameter; and evaluated their crystalline quality. © (2014) Trans Tech Publications; Switzerland;
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103223
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页码：778 / 780
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