On a design of 5GHz linear power amplifier with MOS process

被引：0

作者：

Fukuda, Kouichi ^{[1
]}

Ohno, Takuya ^{[2
]}

Muto, Cosy ^{[3
]}

机构：

[1] Graduate School of Life Science and System Engineering, Kyusyu Institute of Technology, Wakamatsu-ku, Kitakyusyu 808-0196, 2-4, Hibikino

[2] School of Engineering, Kyusyu Institute of Technology, Tobata-ku, Kitakyusyu 804-8550, 1-1, Sensui

[3] Center for Human Quality of Life Through IT, Kyusyu Institute of Technology, Wakamatsu-ku, Kitakyusyu 808-0196, 2-4, Hibikino

来源：

IEEJ Transactions on Electronics, Information and Systems | 2009年 / 129卷 / 08期

关键词：

Class a operation; Distortion; Drain efficiency; MOS transistor; Power amplifier; RF;

D O I：

10.1541/ieejeiss.129.1476

中图分类号：

学科分类号：

摘要：

In recent years, RF power amplifiers in MOS process are designed. In this paper, we discuss design considerations for MOS RF linear power amplifier. At first, we analyze class-A and AB amplifiers based on square-low characteristics and derive their distortion and drain efficiency, which include different results from literatures. We then consider a class-A 5GHz PA design with push-pull and Series-Combining Transformer configuration in 90nm process. Simulation results show that linear output up to 20.1[dBm] and P1dB of 21[dBm] are obtained. © 2009 The Institute of Electrical Engineers of Japan.

引用

页码：1476 / 1482+5

共 7 条

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