Abrupt lateral-source heterostructures with relaxed/strained layers for ballistic complementary metal oxide semiconductor transistors fabricated by local O+ ion-induced relaxation technique of strained substrates

被引：0

作者：

Mizuno, Tomohisa ^{[1
,2
]}

Hasegawa, Mitsuo ^{[1
]}

Ikeda, Keiji ^{[3
]}

Nojiri, Masashi ^{[4
]}

Horikawa, Tsuyoshi ^{[2
]}

机构：

[1] Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan

[2] MIRAI-NIRC, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

[3] MIRAI-Toshiba, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

[4] AIST, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

来源：

Japanese Journal of Applied Physics | 2011年 / 50卷 / 4 PART 2期

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摘要：

CMOS integrated circuits - Interfaces (materials) - Silicon on insulator technology - Substrates - Transistors - Electric breakdown - Fabrication - Metallic compounds - Oxide semiconductors - Strain - MOS devices - Metals - Ballistics - Silica - Dielectric devices - Ion implantation

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