Application of focused ion beam techniques and transmission electron microscopy to thin-film transistor failure analysis

被引：0
|
作者：
Tsuji, Satoshi [1 ,4 ]
Tsujimoto, Katsuhiro [2 ]
Kuroda, Kotaro [3 ]
Saka, Hiroyasu [3 ]
机构：
[1] Yamato Site, Ibm Japan, Ltd, Yamato,242-8502, Japan
[2] Research Laboratory of High-Voltage Electron Microscope, Kyushu University, Fukuoka,816-8580, Japan
[3] Graduate School of Engineering, Nagoya University, Nagoya,464-8603, Japan
[4] Yamato Site (LAB-S51), Ibm Japan, Ltd., 1623-14 Shimotsuruma, Kanagawa-ken, Yamato-shi,242-8502, Japan
来源：
Microsc. | 2050年 / 5卷 / 465-470期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Amorphous films - Amorphous silicon - Defects - Etching - Failure analysis - Film preparation - Focused ion beams - High resolution transmission electron microscopy - Ions - Liquid crystal displays - Thin film circuits - Thin films
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