Application of focused ion beam techniques and transmission electron microscopy to thin-film transistor failure analysis

被引：0

作者：

Tsuji, Satoshi ^{[1
,4
]}

Tsujimoto, Katsuhiro ^{[2
]}

Kuroda, Kotaro ^{[3
]}

Saka, Hiroyasu ^{[3
]}

机构：

[1] Yamato Site, Ibm Japan, Ltd, Yamato,242-8502, Japan

[2] Research Laboratory of High-Voltage Electron Microscope, Kyushu University, Fukuoka,816-8580, Japan

[3] Graduate School of Engineering, Nagoya University, Nagoya,464-8603, Japan

[4] Yamato Site (LAB-S51), Ibm Japan, Ltd., 1623-14 Shimotsuruma, Kanagawa-ken, Yamato-shi,242-8502, Japan

来源：

Microsc. | 2050年 / 5卷 / 465-470期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Amorphous films - Amorphous silicon - Defects - Etching - Failure analysis - Film preparation - Focused ion beams - High resolution transmission electron microscopy - Ions - Liquid crystal displays - Thin film circuits - Thin films

引用

共 50 条

[1] Application of focused ion beam techniques and transmission electron microscopy to thin-film transistor failure analysis
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JOURNAL OF ELECTRON MICROSCOPY, 2004, 53 (05): : 465 - 470
[2] Application of cross-sectional transmission electron microscopy to thin-film-transistor failure analysis
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[3] Application of cross-sectional transmission electron microscopy to thin-film-transistor failure analysis
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