Ultraviolet photon counting with GaN avalanche photodiodes

被引：0

作者：

McIntosh, K.A. ^{[1
]}

Verghese, S. ^{[1
]}

Molnar, R.J. ^{[1
]}

Mahoney, L.J. ^{[1
]}

Molvar, K.M. ^{[1
]}

Connors, M.K. ^{[1
]}

Aggarwal, R.L. ^{[1
]}

Melngailis, I.L. ^{[1
]}

机构：

[1] Massachusetts Inst of Technology, Lexington, United States

来源：

Annual Device Research Conference Digest | 2000年

关键词：

Avalanche diodes - Electric breakdown - Leakage currents - Nitrides - Photocurrents - Photons - Semiconducting gallium compounds - Semiconductor device structures - Vapor phase epitaxy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Photon counting, or Geiger-mode, measurements of GaAn APDs were carried out. The photon detection efficiency (PDE) at 325 nm and dark count rate were measured as a function of the applied voltage bias. A PDE of 13% was observed at a dark count rate of 400 KHz. The best devices exhibit leakage current less than 20nA at 90% of breakdown voltage.

引用

页码：169 / 170