A highly efficient 3.5GHz inverse class-F GaN HEMT power amplifier

被引：0
|
作者：
Department of Microtechnology and Nanoscience, GigaHertz Centre, Chalmers University of Technology, 9 Kemivgen, 41296 Gothenburg, Sweden [1 ]
机构：
来源：
Int. J. Microw. Wirel. Technol. | 1759年 / 3-4卷 / 317-324期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Gallium nitride
引用
收藏
相关论文
共 50 条
  • [21] Design and Implementation of Class-F GaN HEMT Power Amplifier for S-Band Radar
    Pradeep, K. S.
    Chowdhary, Chetan C.
    Poornima, P.
    Ramya, K.
    2017 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, COMMUNICATION, COMPUTER, AND OPTIMIZATION TECHNIQUES (ICEECCOT), 2017, : 103 - 109
  • [22] A High-Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer
    Ando, Akhiro
    Takayama, Yoichiro
    Yoshida, Tsuyoshi
    Ishikawa, Ryo
    Honjo, Kazuhiko
    APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 815 - 818
  • [23] Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
    Mi, Junlin
    Fan, Ruinan
    Yan, Liping
    Feng, Yuhao
    Liu, Changjun
    IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2025, 35 (02): : 241 - 244
  • [24] Design of High Efficiency GaN HEMT Class-F Power Amplifier at S-band
    Wang, Ying
    Dong, Shiwei
    Yang, Lisheng
    Li, Zhengjun
    Dong, Yazhou
    Fu, Wenli
    PROCEEDINGS OF 2014 3RD ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION (APCAP 2014), 2014, : 1157 - 1158
  • [25] Comparison study of 3.5 GHz class-F power amplifiers
    Ge, Fuding
    Song, Hongjiang
    2007 50TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-3, 2007, : 387 - 390
  • [26] Continuous Inverse Class-F GaN Power Amplifier with 70% Efficiency over 1.4-2 GHz Bandwidth
    Piacibello, Anna
    Zhang, Zhifan
    Camarchia, Vittorio
    2023 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS, 2023, : 10 - 12
  • [27] Highly efficient Doherty power amplifier using continuous inverse class-F and class-J hybrid mode
    Wang, Tao
    Cheng, Zhiqun
    Liu, Guohua
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2020, 30 (12)
  • [28] A highly efficient concurrent dual-band GaN class-AB power amplifier at 1.84 GHz and 3.5 GHz
    Borjlu, Shaban Rezaei
    Asemani, Davud
    Dousti, Massoud
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2017, 27 (09)
  • [29] A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module
    Jeong, Hae-Chang
    Oh, Hyun-Seok
    Yeom, Kyung-Whan
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (12) : 3184 - 3194
  • [30] A Highly Efficient Concurrent Dual-Band Class-F Power Amplifier for Applications at 1.7 and 2.14 GHz
    Zhu, Shou-Kui
    Cheng, Qian-Fu
    Fu, Hai-Peng
    Wu, Hai-Feng
    Ma, Jian-Guo
    2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,
12345