Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix

被引：0
作者：
Strong, Wyatt H. [1 ]
Forbes, David V. [1 ]
Hubbard, Seth M. [1 ]
机构：
[1] NanoPower Research Laboratory, Rochester Institute of Technology, 156 Lomb Memorial Drive, Rochester, NY 14623, United States
来源：
Materials Science in Semiconductor Processing | 2014年 / 25卷
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摘要：
46
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页码：76 / 83
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