Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix

被引：0

作者：

Strong, Wyatt H. ^{[1
]}

Forbes, David V. ^{[1
]}

Hubbard, Seth M. ^{[1
]}

机构：

[1] NanoPower Research Laboratory, Rochester Institute of Technology, 156 Lomb Memorial Drive, Rochester, NY 14623, United States

来源：

Materials Science in Semiconductor Processing | 2014年 / 25卷

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摘要：

引用

页码：76 / 83

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