Nanoscale diffusion barriers for copper metallization

被引：0

作者：

Traving, Martin ^{[1
]}

Schindler, Günther ^{[1
]}

Steinlesberger, Gernot ^{[1
]}

Steinhögl, Werner ^{[1
]}

Engelhardt, Manfred ^{[1
]}

机构：

[1] Infineon Technologies AG, Munich, Germany

来源：

Semiconductor International | 2003年 / 26卷 / 08期

关键词：

Crystal structure - Current density - Electric conductivity - Electric fields - Leakage currents - Metallizing - Tantalum;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Nanoscale diffusion barriers for copper metallization is discussed. The study is conducted to investigate the scaling limits of current Ta/TaN barrier technology and its compatibility with the end-of-roadmap target values. The functionality as well as the electrical properties of thin tantalum-based barrier layers are examined. Leakage current measurements of annealed structures for effective barrier layer thickness down to sub-2 nm thicknesses show no significant change. It is suggested that by reducing the nitrogen content of the TaN layer, the resistivity of the barrier stack could be successfully decreased further.

引用

页码：73 / 78