Tailoring the optoelectronic properties of g-C6N6/GaTe vdW heterojunction by biaxial strain

被引：0
|
作者：
Yang, Jian [1 ]
Wei, Xiumei [1 ]
Wang, Zhenduo [1 ]
Huang, Yuhong [1 ]
Zhu, Gangqiang [1 ]
Zhang, Jinmin [1 ]
机构：
[1] School of Physics & Information Technology, Shaanxi Normal University, Shaanxi, Xi'an,710119, China
来源：
Diamond and Related Materials | 2022年 / 130卷
关键词：
Heterojunctions;
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