Influence of organic contaminant on trap generation in thin SiO2 of metal-oxide-semiconductor capacitors

被引：0
|
作者：
Yoshino, Takenobu [1 ]
Yokoyama, Shin [1 ,2 ]
Fujii, Toshiaki [3 ]
机构：
[1] Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
[2] EBARA Co., Ltd., 4-2-1, Honfujisawa, Fujisawa 251-8502, Japan
[3] Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, Japan
来源：
| 2002年 / Japan Society of Applied Physics卷 / 41期
关键词：
Interface trap density - Organic contaminant - Photoelectron method - Trap generation;
D O I：
10.1143/jjap.41.4750
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] METAL-OXIDE-SEMICONDUCTOR CAPACITORS ON SILICON-CARBIDE
    HARRIS, RCA
    SOLID-STATE ELECTRONICS, 1976, 19 (02) : 103 - 105
  • [42] SLOW CURRENT TRANSIENTS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
    YAO, ZQ
    DIMITRIJEV, S
    TANNER, P
    HARRISON, HB
    APPLIED PHYSICS LETTERS, 1995, 66 (19) : 2510 - 2512
  • [43] Charge localization in polymeric metal-oxide-semiconductor capacitors
    Marinov, O.
    Deen, M. J.
    Iniguez, B.
    Ong, B.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03): : 649 - 653
  • [44] Metal-Oxide-Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2 on GaN
    Takashima, Shinya
    Li, Zhongda
    Chow, T. Paul
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
  • [45] Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures
    Fujino, Yuki
    Kita, Koji
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (08)
  • [46] Electrical characteristics and thermal stability of n+ polycrystalline-Si/ZrO2/SiO2/Si metal-oxide-semiconductor capacitors
    Lim, KY
    Park, DG
    Cho, HJ
    Kim, JJ
    Yang, JM
    Choi, IS
    Yeo, IS
    Park, JW
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) : 414 - 419
  • [47] CHARGE GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS DURING FOWLER-NORDHEIM STRESS
    ELRHARBI, S
    JOURDAIN, M
    MEINERTZHAGEN, A
    ELHDIY, A
    PETIT, C
    JOURNAL DE PHYSIQUE III, 1994, 4 (06): : 1045 - 1051
  • [48] Ionic contamination in metal-oxide-semiconductor Al/SiO23C-SiC capacitors
    Inst Natl des Sciences Appliquees de, Lyon, Villeurbanne, France
    J Electrochem Soc, 1 (282-285):
  • [49] Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal-oxide-semiconductor devices
    Evangelou, EK
    Konofaos, N
    Aslanoglou, XA
    Dimitriadis, CA
    Patsalas, P
    Logothetidis, S
    Kokkoris, M
    Kossionides, E
    Vlastou, R
    Groetschel, R
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) : 7192 - 7196
  • [50] CHARGE TUNNELING AND TRAPPING AND TRAP GENERATION IN THIN SIO2
    CHANG, C
    LIANG, MS
    HU, C
    BRODERSEN, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C99 - C99
12345