Influence of organic contaminant on trap generation in thin SiO2 of metal-oxide-semiconductor capacitors

被引：0

作者：

Yoshino, Takenobu ^{[1
]}

Yokoyama, Shin ^{[1
,2
]}

Fujii, Toshiaki ^{[3
]}

机构：

[1] Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan

[2] EBARA Co., Ltd., 4-2-1, Honfujisawa, Fujisawa 251-8502, Japan

[3] Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, Japan

来源：

| 2002年 / Japan Society of Applied Physics卷 / 41期

关键词：

Interface trap density - Organic contaminant - Photoelectron method - Trap generation;

D O I：

10.1143/jjap.41.4750

中图分类号：

学科分类号：

摘要：

引用