Influence of organic contaminant on trap generation in thin SiO2 of metal-oxide-semiconductor capacitors

被引：0
|
作者：
Yoshino, Takenobu [1 ]
Yokoyama, Shin [1 ,2 ]
Fujii, Toshiaki [3 ]
机构：
[1] Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan
[2] EBARA Co., Ltd., 4-2-1, Honfujisawa, Fujisawa 251-8502, Japan
[3] Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, Japan
来源：
| 2002年 / Japan Society of Applied Physics卷 / 41期
关键词：
Interface trap density - Organic contaminant - Photoelectron method - Trap generation;
D O I：
10.1143/jjap.41.4750
中图分类号：
学科分类号：
摘要：
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