High uniformity solid phase crystallized bridged-grain polycrystalline silicon thin film transistors

被引：0
作者：
Center for Display Research, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong [1 ]
机构：
[1] Center for Display Research, Hong Kong University of Science and Technology, Kowloon, Clear Water Bay
来源：
Dig. Tech. Pap. SID Int. Symp. | 2013年 / 1卷 / 1003-1006期
关键词：
bridged grain; high-k dielectric; polycrystalline silicon; thin film transistors;
D O I：
10.1002/j.2168-0159.2013.tb06391.x
中图分类号：
学科分类号：
摘要：
Solid phase crystallized poly-Si TFT with Al2O3 gate dielectric and bridged grain structure is demonstrated. The results show dramatically improved threshold voltage, subthreshold swing and on-off ratio with very high uniformity. The proposed device is promising for application in AMOLED pixel circuits with simple design and low cost. © 2013 Society for Information Display.
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页码：1003 / 1006
页数：3
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