Photoluminescence of amorphous Si films prepared by atmospheric pressure chemical vapor deposition

被引：0
|
作者：
Liu, Yong [1 ]
Xiao, Ying [1 ]
Wo, Yinhua [1 ]
Song, Chenlu [1 ]
Han, Gaorong [1 ]
机构：
[1] Lab. for Silicon Mat., Mat. Sci. and Eng. Dept., Zhejiang Univ., Hangzhou 310027, China
来源：
Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology | 2004年 / 24卷 / 06期
关键词：
Amorphous silicon - Chemical vapor deposition - Photoluminescence - Raman spectroscopy - Thin films - X ray photoelectron spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Amorphous Si films were grown by atmospheric pressure chemical vapor deposition (APCVD). Its microstructures and optical properties were characterized with photo-luminescence (PL) spectroscopy, Raman and X-ray photoelectron spectroscopy (XPS). A green luminescence peak at 523 nm was observed. Raman and XPS spectra show that the films display Si-rich and O-rich phases. We suggest that the phase interfaces result in the luminescence. Data fitting of Raman spectra indicates that Si nano-crystalline grains are embedded in the films.
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页码：469 / 471
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