A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered ZrxSi1-xO2 Gate dielectric and improved electrical and hysteresis performance

被引：0
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作者：
Hung, Chien-Hsiung [1 ]
Wang, Shui-Jinn [1 ,2 ]
Liu, Pang-Yi [1 ]
Wu, Chien-Hung [3 ]
Wu, Nai-Sheng [1 ]
Yan, Hao-Ping [1 ]
Lin, Tseng-Hsing [1 ]
机构：
[1] Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan,701, Taiwan
[2] Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan,701, Taiwan
[3] Department of Electronics Engineering, Chung Hua University, Hsinchu,300, Taiwan
来源：
Japanese Journal of Applied Physics | 2017年 / 56卷 / 04期
关键词：
701.1 Electricity: Basic Concepts and Phenomena - 708.1 Dielectric Materials - 712.1 Semiconducting Materials - 712.1.2 Compound Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 804 Chemical Products Generally - 804.2 Inorganic Compounds - 933.2 Amorphous Solids;
D O I：
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中图分类号：
学科分类号：
摘要：
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