Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition

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National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
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Jpn. J. Appl. Phys. | / 9 PART 1卷 / 7026-7031期
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摘要：
III-V semiconductors - Organic chemicals - Photoluminescence - Semiconductor alloys - Temperature distribution - Metallorganic chemical vapor deposition - Gallium alloys - Organometallics - Industrial chemicals - Organic lasers - Quantum well lasers - Tensile strain
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