Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges

被引：1

作者：

Tang, Baoshan ^{[1
]}

Sivan, Maheswari ^{[1
]}

Leong, Jin Feng ^{[1
]}

Xu, Zefeng ^{[1
]}

Zhang, Yu ^{[1
]}

Li, Jianan ^{[1
]}

Wan, Ruyue ^{[1
]}

Wan, Quanzhen ^{[1
]}

Zamburg, Evgeny ^{[1
]}

Thean, Aaron V-Y ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, 4 Engn Dr 3, Singapore City 117583, Singapore

来源：

NPJ 2D MATERIALS AND APPLICATIONS | 2024年 / 8卷 / 01期

关键词：

TRANSITION-METAL DICHALCOGENIDES; DER-WAALS HETEROSTRUCTURES; THIN-FILM TRANSISTORS; FEW-LAYER MOS2; BORON-NITRIDE; COVALENT FUNCTIONALIZATION; EXFOLIATED GRAPHENE; BLACK PHOSPHORUS; RESISTIVE MEMORY; NANOSHEETS;

D O I：

10.1038/s41699-024-00508-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Solution-processable 2D materials (2DMs) are gaining attention for applications in logic, memory, and sensing devices. This review surveys recent advancements in memristors, transistors, and sensors using 2DMs, focusing on their charge transport mechanisms and integration into silicon CMOS platforms. We highlight key challenges posed by the material's nanosheet morphology and defect dynamics and discuss future potential for monolithic 3D integration with CMOS technology.

引用

页数：30

共 45 条

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