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- [1] Response to "Comment on 'Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles' [J. Appl. Phys. 124, 086101 (2018)]JOURNAL OF APPLIED PHYSICS, 2018, 124 (08)Timerkaeva, DilyaraAttaccalite, ClaudioBrenet, GillesCaliste, DamienPochet, Pascal
- [3] Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principlesJOURNAL OF APPLIED PHYSICS, 2018, 123 (16)Timerkaeva, DilyaraAttaccalite, ClaudioBrenet, GillesCaliste, DamienPochet, Pascal
- [4] Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles 1600, American Institute of Physics Inc. (123):
- [5] Response to "Comment on 'Hydrogen-oxygen interaction in silicon at around 50°C' [J. Appl. Phys. 87, 4635 (2000)]JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 4637 - 4637Markevich, VPSuezawa, M
- [6] Comment on "Hydrogen-oxygen interaction in silicon at around 50°C" [J. Appl. Phys. 83, 2988 (1998)]JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 4635 - 4636Herring, CJohnson, NM
- [7] Response to "Comment on 'Higher order reentrant post modes in cylindrical cavities'" [J. Appl. Phys. 123, 226101 (2018)]JOURNAL OF APPLIED PHYSICS, 2018, 123 (22)McAllister, Ben T.Tobar, Michael E.
- [8] Response to "Comment on 'A model of hole trapping in SiO2 films on silicon'" [J. Appl. Phys. 83, 5591 (1998)]JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) : 5593 - 5594Lenahan, PMConley, JF
- [9] Response to comment on Electronic structure and zone-center phonon modes in multiferroic bulk BiFeO3 ' [J. Appl. Phys. 105, 036108 (2009)]Journal of Applied Physics, 2009, 105 (03):Tütüncü, H.M.Srivastava, G.P.
