Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

被引：0
|
作者：
Yan, Liang-Jyi [1 ]
Kuo, Cheng Huang [2 ]
Sheu, Jinn-Kong [1 ,3 ]
Lee, Ming-Lun [3 ,4 ]
Tseng, Wei-Chun [1 ]
机构：
[1] Yan, Liang-Jyi
[2] Kuo, Cheng Huang
[3] 1,Sheu, Jinn-Kong
[4] 3,Lee, Ming-Lun
[5] Tseng, Wei-Chun
来源：
Sheu, J.-K. (jksheu@mail.ncku.edu.tw) | 1600年 / Elsevier Ltd卷 / 516期
关键词：
Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρc) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10-4 Ω cm2 and 2.4 × 10-5 Ω cm2; respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρc. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface; which led to a marked difference in the ρc of non-alloyed Cr/Au Ohmic contacts to GaN films. © 2011 Elsevier B.V. All rights reserved;
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