Low-temperature growth of CuInSe2 thin films for solar cells with additional annealing in non-self-maintained gaseous discharge

被引：0

作者：

Taran, Anton V. ^{[1
]}

Taran, Valerii S. ^{[2
]}

机构：

[1] Department of Theoretical and Experimental Physics, National Technical University (KPI)

[2] Institute of Plasma Physics, National Science Center, KIPT

来源：

Journal of Advanced Microscopy Research | 2013年 / 8卷 / 02期

关键词：

Copper Chalcopyrite; Discharge; Electron Microscopy; Film Structure; Phase Composition; Solar Cell;

D O I：

10.1166/jamr.2013.1149

中图分类号：

学科分类号：

摘要：

CIS epitaxial films for solar cells were grown on (001) KCl surface with PbS sublayer and on glassceramics at 400 °C. The Vekchinsky technique provided films of variable composition changing from one spot to other. The additional annealing of the (α+β)-CIS films so-obtained on glass-ceramics, in non-self maintained gaseous discharge at 550 °C provided the formation of homogeneous largecrystalline α-CIS. The structure and phase composition of the obtained films have been investigated by transmission electron microscopy. Copyright © 2013 American Scientific Publishers.

引用

页码：137 / 139

页数：2