Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

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[1] Takatsu, J.
[2] Fuji, R.
[3] Tatebayashi, J.
[4] Timmerman, D.
[5] Lesage, A.
[6] 1,Gregorkiewicz, T.
[7] Fujiwara, Y.
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| 1600年 / American Institute of Physics Inc.卷 / 123期
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