Photoluminescence quenching effect on porous silicon films for gas sensors application

被引:0
|
作者
Lab. de Microeletrônica, Escola Politécnica, Universidade de São Paulo, C.P. 61548, 05424-970 São Paulo, SP, Brazil [1 ]
不详 [2 ]
机构
来源
| 1600年 / 1065-1070卷 / April 2004期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Adsorption - Anisotropy - Electric conductivity - Free energy - Light polarization - Mathematical models - Optical sensors - Photoluminescence - Porous silicon - Quenching - Raman spectroscopy
引用
收藏
相关论文
共 50 条