Photoluminescence quenching effect on porous silicon films for gas sensors application

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作者：
Lab. de Microeletrônica, Escola Politécnica, Universidade de São Paulo, C.P. 61548, 05424-970 São Paulo, SP, Brazil [1 ]
不详 [2 ]
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来源：
| 1600年 / 1065-1070卷 / April 2004期
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Compendex;
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摘要：
Adsorption - Anisotropy - Electric conductivity - Free energy - Light polarization - Mathematical models - Optical sensors - Photoluminescence - Porous silicon - Quenching - Raman spectroscopy
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