Effect of internal electric field in well layer of InGaN/GaN multiple quantum well light-emitting diodes on efficiency droop

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School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea, Republic of ^{[1
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不详 ^{[2
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来源：

Jpn. J. Appl. Phys. | / 10卷

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D O I：

100201

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摘要：

Semiconductor alloys - Gallium alloys - III-V semiconductors - Bias voltage - Electric fields - Quantum efficiency - Semiconductor quantum wells - Indium alloys

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