2.5 GHz Gated InGaAs/InP Single-Photon Avalanche Diode with 44 ps Time Jitter

被引：5

作者：

He, De-Yong ^{[1
,2
,3
]}

Wang, Shuang ^{[1
,2
,3
]}

Chen, Jia-Lin ^{[1
,2
]}

Chen, Wei ^{[1
,2
,3
]}

Yin, Zhen-Qiang ^{[1
,2
,3
]}

Fan-Yuan, Guan-Jie ^{[1
,2
]}

Zhou, Zheng ^{[1
,2
]}

Guo, Guang-Can ^{[1
,2
,3
]}

Han, Zheng-Fu ^{[1
,2
,3
]}

机构：

[1] CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei

[2] CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei

[3] Hefei National Laboratory, University of Science and Technology of China, Hefei

来源：

Advanced Devices and Instrumentation | 2023年 / 4卷

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

Impulse response;

D O I：

10.34133/adi.0020

中图分类号：

学科分类号：

摘要：

Gated single-photon avalanche diodes (SPADs) are practical solutions for quantum key distribution (QKD) applications. However, the gating frequency is limited by time jitter and afterpulse probability when SPADs operate at a frequency higher than 2 GHz. We find that filter distortion and variation of signal amplitude are the dominant mechanisms for time jitter in high-frequency scenarios, and design a specific low-pass filter (LPF) and a zero crossing discriminator to reduce the time jitter effectively. Specifically, the LPF extracts avalanche signals and forms accurate zero crossing points by its impulse response, and the zero crossing discriminator correctly discriminates avalanche signals to achieve low time jitter. When the SPAD is operated at a gating frequency of 2.5 GHz with a detection efficiency of 21%, the time jitter and afterpulse probability are 44 ps and 1.4%, respectively. Our results pave the way to practical QKD systems at higher clock rates. Copyright © 2023 De-Yong He et al.

引用

共 19 条

[1] Yuan ZL, Kardynal BE, Sharpe AW, Shields AJ., High speed single photon detection in the near infrared, Appl Phys Lett, 91, 4, (2007)
[2] Namekata N, Adachi S, Inoue S., 1.5 GHz single-photon detection at telecommunication wavelengths using sinusoidally gated InGaAs/InP avalanche photodiode, Opt Express, 17, 8, pp. 6275-6282, (2009)
[3] Walenta N, Lunghi T, Guinnard O, Houlmann R, Zbinden H, Gisin N., Sine gating detector with simple filtering for low-noise infra-red single photon detection at room temperature, J Appl Phys, 112, 6, (2012)
[4] Restelli A, Bienfang JC, Migdall AL., Single-photon detection efficiency up to 50% at 1310nm with an InGaAs/ InP avalanche diode gated at 1.25GHz, Appl Phys Lett, 102, 14, (2013)
[5] Fang Y-Q, Fang W, Chen T-H, Ao C, Liu L, Wang X-J, Gao J, Pan J-W., InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm, Rev Sci Instru, 91, 8, (2020)
[6] Namekata N, Takesue H, Honjo T, Tokura Y, Inoue S., High-rate quantum key distribution over 100 km using ultra-low-noise, 2-GHz sinusoidally gated InGaAs/InP avalanche photodiodes, Opt Express, 19, 11, pp. 10632-10639, (2011)
[7] Fan Y, Shi T, Ji W, Zhou L, Ji Y, Yuan Z., Ultra-narrowband interference circuits enable low-noise and high-rate photon counting for InGaAs/InP avalanche photodiodes, Opt Express, 31, 5, pp. 7515-7522, (2023)
[8] Wu W, Shan X, Long Y, Ma J, Huang K, Yan M, Liang Y, Zeng H., Free-running single-photon detection via GHz gated InGaAs/InP APD for high time resolution and count rate up to 500 mcount/s, Micromachines, 14, (2023)
[9] He D-Y, Shuang W, Wei C, Zhen-Qiang Y, Yong-Jun Q, Zheng Z, Guang-Can G, Han Z-F., Sine-wave gating ingaas/inp single photon detector with ultralow afterpulse, Appl Phys Lett, 110, 11, (2017)
[10] Liang Y, Wu E, Chen X, Ren M, Jian Y, Wu G, Zeng H., Low-timing-jitter single-photon detection using 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode, IEEE Photon Technol Lett, 23, 13, pp. 887-889, (2011)

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