Design of novel high-linearity double-balanced CMOS mixer

被引:0
作者
Zhao, Ming-Jian [1 ]
Li, Bin [1 ]
Wu, Zhao-Hui [1 ]
机构
[1] School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, Guangdong
来源
Li, B. (phlibin@scut.edu.cn) | 1600年 / South China University of Technology卷 / 41期
关键词
Complementary metal oxide semiconductor; Double balance; Linearity; Mixer; Multiplier;
D O I
10.3969/j.issn.1000-565X.2013.05.005
中图分类号
学科分类号
摘要
Proposed in this paper is a novel high-linearity double-balanced mixer for wireless radio frequency (RF) systems, which outputs signals without RF signal-related second-order nonlinear term. In this mixer based on a novel multiplier structure, RF signals are sent to the source and the drain of two symmetrical MOS (Metal Oxide Semiconductor) transistors in the linear region, and local oscillator (LO) signals are sent to the grid. Thus, the double-balanced mixing or multiplying of RF and LO signals are implemented with low complexity. Moreover, the differential push-pull amplifier and the source follower are used as the output buffer interfaces, thus improving the isolation between the mixer and the outside circuits, the power gain and the output matching ability. The proposed mixer is fabricated by 0.18 μm CMOS process and is used as a multiplier in ultra-wide band, with an input 1 dB compression point of 2.9 dBm, a third-order intermodulation of 16 dBm and a total power consumption of 25 mW. Test results demonstrate that the proposed mixer is of good performance and meets the requirements of high-performance and high-speed ultrawideband wireless communication systems.
引用
收藏
页码:28 / 33
页数:5
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