共 45 条
- [1] Megasonic, non-contact cleaning followed by 'Rotagoni' drying of CMP wafers ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000, 2001, 76-77 : 251 - 254
- [3] Single Wafer Cleaning and Drying: Particle removal via a non-contact, non-damaging megasonic clean followed by a high performance "Rotagoni" Dry ISSM 2000: NINTH INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, PROCEEDINGS, 2000, : 157 - 160
- [4] Post copper CMP cleaning: A non-contact megasonic method CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS, 2000, 99 (37): : 499 - 505
- [5] Non-contact post Cu GMP cleaning using megasonic energy ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000, 2001, 76-77 : 39 - 42
- [6] Comparing contact and non-contact technology for post-CMP cleaning CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS, 2000, 99 (37): : 477 - 488
- [7] Non-contact cleaning process for post-CMP copper ULTRA CLEAN PROCESSING OF SILICON SURFACES VII, 2005, 103-104 : 291 - 294
- [8] Development of a non-contact post-CMP cleaning process for copper PARTICLES ON SURFACES 9: DETECTION, ADHESION AND REMOVAL, 2006, : 127 - +
- [9] Non-contact post-CMP cleaning using a single wafer processing system CHEMICAL MECHANICAL PLANARIZATION IN INTEGRATED CIRCUIT DEVICE MANUFACTURING, 1998, 98 (07): : 81 - 89
- [10] Evaluation of non-contact post-CMP cleaning process utilizing split-lot polishing and cleaning comparisons CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING V, 1998, 35 : 634 - 641