Design of a dual-directional diode-triggered SCR for low voltage ESD protection

被引：0

作者：

Xu Q. ^{[1
]}

Liang H. ^{[1
]}

Gu X. ^{[1
]}

机构：

[1] Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi

来源：

IEEJ Transactions on Electronics, Information and Systems | 2020年 / 140卷 / 06期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

Diode-triggered silicon controlled rectifier; Dual-directional ESD protection; Electrostatic discharge (ESD);

D O I：

10.1541/ieejeiss.140.673

中图分类号：

学科分类号：

摘要：

A novel dual-directional diode-triggered silicon controlled rectifier (DDTSCR) for low voltage electrostatic discharge (ESD) protection was designed and realized in a 0.18-µm CMOS process. Compared to the single-directional diode-triggered SCR (SDTSCR), the DDTSCR has dual-directional ESD protection performance due to the symmetric structure, and its ESD protection efficiency per unit area is about 2 times larger than that of SDTSCR under opposite ESD stresses, while remaining the similar trigger voltage of 1.68 V and the figure of merit. The human body model robustness of the DDTSCR measured by the transmission line pulse system is up to 8000 V with an area of 1400 µm2, suitable for low voltage ESD protection requirements. © 2020 The Institute of Electrical Engineers of Japan.

引用

页码：673 / 674

页数：1

共 3 条

[1]

Huang X., Liu Z., Liu F., Liu J., Song W., High holding voltage SCRs with segmented layout for high-robust ESD protection, IEEE Electron. Lett., 53, 18, pp. 1274-1275, (2017)

[2]

Wang X., Liu J., Fan S., Lin L., Tang H., Wang A., Chen H., Yang L., Zhao B., Cross-coupling low-triggering dual-polarity CLTDSCR ESD protection in COMS, IEEE Electron Device Lett, 31, 10, pp. 1143-1145, (2010)

[3]

Liu W., Liou J.J., Yeh H.-C., Wang H., Li Y., Yeo K.S., Bidirectional diode-triggered silicon-controlled rectifiers for low-voltage ESD protection, IEEE Electron Device Lett, 33, 10, pp. 1360-1362, (2012)

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