Pulsed laser deposition of Nd-doped BaSnO3 thin films on c-plane sapphire substrate for transparent sensors

被引：0

作者：

Mishra, Gitanjali ^{[1
]}

Tiwari, Ashutosh ^{[1
]}

机构：

[1] Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, 84112, UT

来源：

Materials Science and Engineering: B | 2024年 / 310卷

关键词：

Oxides; Pulsed laser deposition; Thin films;

D O I：

10.1016/j.mseb.2024.117768

中图分类号：

学科分类号：

摘要：

This paper discusses the growth and characterization of Nd-doped BaSnO3 (NDBSO) thin films on sapphire (0001) substrates using the Pulsed Laser Deposition (PLD) technique. NDBSO is a promising material for transparent sensors and electronics due to its wide bandgap. The study demonstrates a well-aligned heteroepitaxial growth of NDBSO on sapphire (0001) with a lattice parameter of 0.4226 nm. The results revealed high reliability and minimal aging effects under various environmental conditions. The utilization of PLD offered precise control over film thickness, enabling the fabrication of high-quality ultra-thin films approximately 500 nm in thickness through the ablation process involving 10,000 laser pulses. Key performance indicators (KPIs) include high transparency (>90 % for wavelengths above 500 nm), reproducibility, and structural stability. © 2024

引用

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