Transient characteristic analysis of a double-gate dual-strained-channel SOI CMOS

被引：0
|
作者：
Sun, Liwei [1 ]
Gao, Yong [1 ]
Yang, Yuan [1 ]
Liu, Jing [1 ]
机构：
[1] Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2008年 / 29卷 / 08期
关键词：
Control mechanism - Conversion time - Double gate - Dual-strained-channel - Effective gate length - Novel structures - Strained SiGe - Transient characteristic;
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摘要：
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页码：1566 / 1569
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