Influence of V substitutions on sintering behaviors and microwave dielectric properties of Ba4LiNb3O12 ceramic

被引:0
作者
Tian, Yulong [1 ]
Wang, Wei [1 ]
Wang, Xin [1 ]
Li, Jie [2 ]
Zhou, Di [1 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Multifunct Mat & Struct, Minist Educ, Xian 710049, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Fac Elect & Informat Engn, Sch Informat & Commun Engn, Xian 710049, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Ba4LiNb3O12; ceramics; dielectric properties; sintering behaviors; CRYSTAL-STRUCTURE; B'; GD; HO; DY; TEMPERATURE; PEROVSKITES; PR; BA; LA;
D O I
10.1111/jace.20183
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, a series of Ba4Li(Nb1-xVx)(3)O-12 (x = 0.05 similar to 0.3) ceramics were synthesized using the solid-state reaction method. X-ray powder diffraction (XRD) analysis shows that the composite ceramics contain both Ba4LiNb3O12 and Ba-3(VO4)(2) phases, without any other phases present. The grains consist of Ba4LiNb3O12 and Ba-3(VO4)(2), as illustrated by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). Additionally, with the increase of V content, the grain size decreases, and the epsilon r (microwave dielectric constant) decreases, the tau(f) (resonant frequency temperature coefficient) value decreases, and the Qxf value increases (where Q = quality factor = 1 / dielectric loss, and f = resonant frequency). The densest Ba4Li(Nb0.7V0.3)(3)O-12, with a epsilon r of 31.3, tau(f) of + 70 ppm/degrees C, and high Qxf of 42 850 GHz, was obtained at a sintering temperature of 1350 degrees C. Furthermore, the addition of 5 wt.% BaCu(B2O5) (BCB) into Ba4Li(Nb0.7V0.3)(3)O-12 resulted in obtaining dense ceramics at a sintering temperature of 925 degrees C, with a epsilon r of 23.5, a high Qxf value of 14 370 GHz, and tau(f) of + 88 ppm/degrees C. Further investigations have shown that Ba4Li(Nb1-xVx)(3)O-12 ceramics are chemically compatible with Ag, suggesting its potential use in low-temperature cofired ceramics technology.
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页数:7
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