Nonvolatile resistive memory switching in amorphous LaGdO3 thin films

被引：0
|
作者：
Misra, P. [1 ]
Pavunny, S.P. [1 ]
Katiyar, R.S. [1 ]
机构：
[1] Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan,PR,00936-8377, United States
来源：
Journal of Mechanics | 2013年 / 1562卷 / 03期
关键词：
Conductive filaments - Current conduction mechanisms - High-resistance state - Non-volatile memory - Poole-Frenkel emission - Resistive switching - Switching voltages - Temperature-dependent resistance;
D O I：
10.1557/opl.2013.556
中图分类号：
学科分类号：
摘要：
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