Polarization modulation of nanotrenches in GaN (0001)/(0001′) by surface hydrogenation

被引：0

作者：

Yayama, Tomoe ^{[1
,2
]}

Gao, Yanlin ^{[3
]}

Okada, Susumu ^{[3
]}

Chikyow, Toyohiro ^{[2
]}

机构：

[1] National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Tsukuba,305-8568, Japan

[2] International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Ibaraki,305-0044, Japan

[3] Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Tsukuba,305-8571, Japan

来源：

Japanese Journal of Applied Physics | 2017年 / 56卷 / 11期

关键词：

Number:; JP16H00898; JP16H06331; JP17H01069; Acronym:; KAKEN; Sponsor: Japan Society for the Promotion of Science; -; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology; IAE; Sponsor: Institute of Advanced Energy; Kyoto University;

D O I：

111002

中图分类号：

学科分类号：

摘要：

Gallium nitride

引用